vb30100s-m3 www.vishay.com vishay general semiconductor revision: 15-may-13 1 document number: 87985 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high-voltage trench mos barrier schottky rectifier ultra low v f = 0.39 v at i f = 5 a features ? trench mos schottky technology ? low forward voltage drop, low power losses ? high efficiency operation ? low thermal resistance ? meets msl level 1, per j-std-020, lf maximum peak of 245 c ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in high frequency converters, switching power supplies, freewheeling diod es, or-ing diode, dc/dc converters, and reverse battery protection. mechanical data case: to-263ab ? molding compound meets ul 94 v-0 flammability rating base p/n-m3 - halogen-free, rohs-compliant, and commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? m3 suffix meets jesd 201 class 1a whisker test polarity: as marked ? mounting torque: 10 in-lbs maximum notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 40 ms primary characteristics package to-263ab i f(av) 30 a v rrm 100 v i fsm 250 a v f at i f = 30 a 0.69 v t j max. 150 c diode variations common cathode tmbs ? vb30100s to-263ab nc a k heatsink nc a k maximum ratings (t a = 25 c unless otherwise noted) parameter symbol vb30100s unit maximum repetitive pe ak reverse voltage v rrm 100 v maximum average forward rectified current (fig. 1) i f(av) 30 a peak forward surge current 8.3 ms single half ? sine-wave superimposed on rated load i fsm 250 a voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction and storage temperature range t j , t stg - 40 to + 150 c electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit instantaneous forward voltage (1) i f = 5 a t a = 25 c v f 0.47 - v i f = 10 a 0.55 - i f = 30 a 0.80 0.91 i f = 5 a t a = 125 c 0.39 - i f = 10 a 0.49 - i f = 30 a 0.69 0.78 reverse current (2) v r = 70 v t a = 25 c i r 27 - a t a = 125 c 11 - ma v r = 100 v t a = 25 c 70 1000 a t a = 125 c 23 45 ma
vb30100s-m3 www.vishay.com vishay general semiconductor revision: 15-may-13 2 document number: 87985 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - forward current derating curve fig. 2 - forward power loss characteristics fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse characteristics thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol vb30100s unit typical thermal resistance r ? jc 2.0 c/w ordering information (example) package preferred p/n unit weight (g) pac kage code base quantity delivery mode to-263ab vb30100s-m3/4w 1.380 4w 50/tube tube to-263ab vb30100s-m3/8w 1.380 8w 800/reel tape and reel 35 30 25 20 15 10 5 0 0 25 50 75 100 125 150 average forwa rd c u rrent (a) ca s e temperature (c) mounted on s pecific heat s ink re s i s tive or inductive load 0 4 8 12 16 20 24 28 32 0 4 8 12162024283236 average forward current (a) average power lo ss (w) d = t p /t t p t d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0.8 d = 1.0 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1.0 1.2 in s tantaneou s forward voltage (v) t a = 150 c t a = 125 c t a = 25 c in s tantaneou s forward current (a) 0.001 0.01 0.1 1 10 100 1000 10 20 30 40 50 60 70 80 90 100 percent of rated peak rever s e voltage (%) in s tantaneou s rever s e current (ma) t a = 150 c t a = 125 c t a = 25 c
vb30100s-m3 www.vishay.com vishay general semiconductor revision: 15-may-13 3 document number: 87985 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical junction capacitance fig. 6 - typical transient thermal impedance package outline dimensions in inches (millimeters) 100 1000 10 000 0.1 1 10 100 rever s e voltage (v) junction capacitanc e (pf) 0.001 0.01 0.1 1 10 0.01 0.1 1 10 100 t - pul s e duration ( s ) tran s ient thermal impedance (c/w) junction to ca s e to-263ab 0.670 (17.02) 0.591 (15.00) 0.105 (2.67) 0.095 (2.41) 0.08 (2.032) min. 0.15 (3.81) min. 0.33 (8.38) min. 0.42 (10.66) min. nc a k k 0.140 (3.56) 0.110 (2.79) 0.021 (0.53) 0.014 (0.36) 0.110 (2.79) 0.090 (2.29) 0 to 0.01 (0 to 0.254) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.190 (4.83) 0.160 (4.06) 0.205 (5.20) 0.195 (4.95) 0.624 (15.85) 0.591 (15.00) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.360 (9.14) 0.320 (8.13) 0.411 (10.45) 0.380 (9.65) 0.245 (6.22) min. mounting pad layout
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